Commonly used high-power LED chip production process

Introduction: a single LED light emitting region and effectively increasing the amount of current flowing through the uniform distribution layer TCL to achieve the desired flux.

LED chip manufacturing process

In order to obtain high power LED devices, it is necessary to prepare a suitable high-power LED panel lamp chip. The international community is usually high-power LED chip manufacturing methods are summarized as follows:

Commonly used high-power LED chip production process

Increase the size of the light

A single LED emitting region and effectively increasing the amount of current flowing through the uniform distribution layer TCL to achieve the desired flux. But simply increasing luminous area do not solve this problem, the heat problem, can not achieve the desired effect of magnetic flux and practical application.

Flip chip method

First of all, for a large LED panel light chip, and preparation of a suitable size on the silicon substrate and silicon substrate, using gold eutectic solder layer and a conductive layer conductor (ultrasonic gold wire ball joint), and the use of the mobile device is welded on the silicon substrate LED chip with eutectic solder and big size. Such a structure is more reasonable, not only to consider this issue, taking into account the issue of light and heat, which is the mainstream of high-power LED production.

Flip chip method.

LED chip LED panel light chip crystal structure of the universal device under a large, on the ceramic plate and the ceramic substrate of the eutectic solder layer and a conductive layer in the region of the corresponding lead welding, using crystal LED chip and large size ceramic sheet welding electrode welding equipment. This structure is the need to consider the issue, but also need to consider the issue, light, heat, using high thermal conductivity ceramic plates, ceramic plates, the cooling effect is very good, the price is relatively low, more suitable for the current basic packaging materials and the space reserved for the future integration of integrated circuit.

Sapphire substrate transition method

The PN sapphire substrate after removal of the manufacturer, the growth of InGaN chip on the sapphire substrate, then the traditional four element connection, the lower electrode manufacturing large blue LED chip structure, by conventional methods.

AlGaInN silicon carbide (SiC) back light method

The United States is the world's only silicon carbide substrate AlGaInN ultra high brightness LED manufacturers, over the years the production of AlGaInN/SICA chip architecture continues to improve and increase brightness. Since the P and N electrodes are located at the top and bottom of the chip, using a single wire bonding, good compatibility, ease of use, and thus become the mainstream of the development of AlGaInNLED another product.