GaAs epitaxial substrate market size will exceed $400 million

Strategy Analytics released the latest annual forecast report semi insulating gallium arsenide (SI GaAs) epitaxial substrate Market Forecast 2008-2013". The report concludes that semi insulating gallium arsenide (SI GaAs) epitaxial substrate market growth rate of 22% in 2008, but Strategy Analytics is expected in 2009 the market will be flat or negative growth. With the help of the cellular mobile phone platform for the next generation of embedded GaAs (GaAs) device, as well as from other markets on GaAs (GaAs) device, semi insulating GaAs epitaxial substrate (SI GaAs) market will resume growth in 2010.

Since suppliers have focused on HBT (Heterojunction Bipolar Transistor), HEMT (High ELectron Mobility Transistor) and FET (Field Effect Transistor) epitaxial substrate structure, and the market is more concerned about is the solution of multi structure on a substrate, in order to provide BiFET (Bipolar Field Effect Transistor) or BiHEMT (Bipolar High Electron Mobility Transistor) device.

Strategy Analytics and GaAs compound semiconductor technology market research director Asif Anwar said: "Strategy Analytics BiFET / BiHEMT substrate structure expected in 2008 accounted for all of the semi insulating GaAs (SI GaAs) epitaxial substrate Market 6%. Although the market share is still very small, but because of the need to provide integrated solutions to GaAs devices to provide differentiated products, the market segments from now to 2013 will be the fastest growing. "

This report examines the supply chain dynamics, and a large number of analysis of the final demand driven factors for semi insulating GaAs (SI GaAs) epitaxial substrates. By 2013 the market outlook forecast results show that 2008 to 2013, the epitaxial substrate Market CAGR of 5%. Accordingly, GaAs MOCVD (Metal Organic Chemical Deposition) and MBE (Molecular Beam Epitaxy) substrate market size in 2013 will be more than 400 million U.S. dollars in.