LED key research institutions and new trends in Compound Semiconductors

, key research institutions 1 Nagoya Industrial University

Nano devices and systems research center of Nagoya Industrial University was founded by Professor Meno Jungyi, famous expert, in the current director under the leadership of Professor Egawa Takashi, including Professor Shao Chunlin, Chinese doctoral team is committed to long-term on silicon substrate of gallium nitride (GaN) compound semiconductor research department.

The main research topic of this center is the research on the GaN epitaxial wafer growth technology, LED and HEMT on the silicon substrate. The research began in 2003 and ended in 2005, which lasted 3 years. In addition, also with the Japanese Taiyo Nippon sanso Corporation jointly developed MOCVD, and Oki joint research and development of electronic equipment. 2003, the successful development of the substrate substrate of the 2 inch, gallium nitride epitaxial film growth and its various equipment.

2004, the center has successfully developed a silicon substrate on the substrate of 4 inches InGaN LED and AlGaN/GaN HEMT. At present, is developed by Japanese Taiyo Nippon sanso corporation specializing in 6 inch silicon substrate equipment, carrying out research on 6 inch wafer growth technology.

Another issue is the tuning of environmental type high performance nano sensors, materials development". The project will last for 5 years, the main objective is to make on the sapphire substrate to the growth of high quality epitaxial wafer (AlGaN/GaN) crystal, developed in 4 inches of substrate on the growth of homogeneous epitaxial wafer crystallization of MOCVD equipment, the AIN solid dissolved in GaN, the development of semiconductor UV sensor test wide band width.

2 City University

Professor Akasaki Yong of the famous university is a pioneer in the field of global LED. The development of Blu ray LED, violet LD, directly or indirectly to the industry brought Enze. With the application of violet LED in real life gradually gained popularity, now began to AIN from the substrate to produce epitaxial wafer, high light-emitting efficiency and medical equipment production or processing and other aspects of the research work.

A large ingot is produced at low pressure by using a unique high temperature growth method and a combination reaction, in order to obtain the substrate efficiently, as in the case of a GaAs substrate. At the same time, they are also trying to grow epitaxial films of nitrogen compounds on AIN substrates in order to produce high quality crystals and nanostructures.

In the field of UV laser, the competition of shortening the wavelength of the laser has been going on all over the world. In March 2004, the famous university published the world's shortest wavelength of only 350.9nm UV laser papers, once again demonstrated its leading technology in the world of nitrogen based compounds. After that, the United States Energy (power) semiconductor, LED manufacturer CREE announced at the Institute: they have achieved 343nm wavelength UV laser. The research results of the famous university, the active layer in the use of GaN and did not join the Al, CREE company is likely to join the active layer of Al, so at this level, the two of them began the second round of competition.

Many companies and research institutions in the world are speeding up the development of high efficiency white LED. City University has been in the research project, the realization of quantum efficiency of 32%, luminous efficiency of 80lm/W as their goal. The study, funded by the Japan Science and Technology Agency, will take 3 years to complete in 2004.

Two, the latest trends in compound semiconductor device

MOCVD equipment and MBE equipment market, due to the company in 2000 to GaAs system as the center of a lot of investment, so since 2001, its growth has shown a slowdown trend. However, in the MOCVD equipment market, although special semiconductor laser communication GaAs system of electronic equipment and InP system of the decline in demand, but in the special vehicle, mobile phone backlight, lighting equipment and other fields, the application of GaN system of blue and white LED is quite active, the red LED DVD blue violet semiconductor laser, GaAs system the demand is still strong, showing the overall trend of rising. Global shipments of MOCVD shipments are estimated to be 80-100 in 2003 and will rise in 2004.

With the GaN LED and blue violet semiconductor laser as the center of the device continues to grow, MOCVD demand is gradually expanding. In addition, with the high power of the device and the size of the chip is large, the demand for the substrate will gradually show the trend of large caliber, its disposal equipment will also increase. In MOCVD and MBE equipment suppliers, the technical strength of the European and American enterprises in the world.

Three, compound semiconductor crystal, epitaxial film of the latest trends

Single crystal technology, epitaxial wafer technology has become the key technology. Compound semiconductor single crystal substrate materials mainly include: GaP type LED substrate for low brightness; for high brightness of four yuan LED, infrared LED, CD LD, mobile phone and other mobile electronic semiconductor devices on the GaAs substrate, the substrate of InP special LD communication. In addition, recently, the blue LED as the representative of the GaN series LED manufacturing sapphire substrate growth is very significant. In addition, the growth of epitaxial wafer has become the key technology in this field. The following is the main blue light compound semiconductor materials trends.

GaN

The current mainstream method of making GaN crystallization is MOCVD. However, its biggest task is to achieve stable supply capacity through the establishment of mass production technology. The GaN substrate was first established by the Sumitomo Electric Co., ltd.. In addition, Hitachi electric, mechanical metal, ancient river CREE company also plans to participate in the field.

Sapphire

Single crystalline sapphire substrate as blue and white LED