OSRAM has developed a high-performance blue white LED prototype silicon chip

German OSRAM (OSRAM) Optoelectronic Semiconductor R & D personnel to create a high-performance blue white LED prototype silicon chip, gallium nitride light-emitting material layer is placed on a diameter of 150 mm silicon wafer substrate. This is the first successful use of silicon wafer substrate instead of sapphire substrate to make LED chips, and to maintain the same lighting quality and efficiency. Currently, the LED chip has entered the pilot phase, under the actual conditions of the test. OSRAM said the first silicon wafer LED chip is expected to put on the market within two years.

The silicon wafer substrate has obvious advantages compared with the traditional chip. Silicon is widely used in the semiconductor industry, can meet the production requirements of the larger diameter of the wafer, and silicon material has better thermal properties and relatively low price, so the silicon wafer substrate chip will become the future of the LED lighting market more attractive price advantage and choice. In addition, the technical index of the new high performance blue and white LED is comparable with conventional sapphire substrates, by testing the blue UX:3 chip under 3.15V voltage, brightness up to 634 MW, the conversion efficiency is equivalent to 58%, is an excellent numerical 1 mm2 chip 350 ma current for LED lighting.

OSRAM's research and development activities by the German Federal Ministry of Education (BMBF) silicon wafer substrate Gan (GaNonSi) project funded.