ST high current power field effect transistor on resistance

STMicroelectronics before the car for the market launch of the new high current power field effect transistor MOS, this product uses the latest ST optimized STripFET patented technology, realized the lowest turn-on resistance.

According to reports, STD95N04 is a standard 40V level DPAK products, the maximum on resistance RDS (on) 6.5m, specifically for the DC-DC converter, motor control, solenoid valve driver and ABS design. The typical RDS (on) of the new product is able to meet the requirements of the standard threshold voltage in the range of 5m. STD95N04 meets the automotive electrical Council Component Technical Committee for automotive environmental components developed by the AEC Q101 discrete device stress test standard. The maximum operating temperature of the component is 175 DEG C, and the avalanche test is performed by 100%.

STripFET technology based on the density of the unit to improve significantly, on resistance and power consumption is lower than the previous generation technology, occupied less silicon area. Other power field effect MOS transistors that are being developed will use the same technology to meet the requirements of DPAK and D2PAK.