Japanese scientists at the North Carolina State University before developed a new technology in electricity consumption situation significantly enhance the light emitting diode (LED) does not increase the brightness. At the same time, with the help of a special coating material, the new LED is more stable and more adaptable than ordinary LED products. Related papers published online in the international famous chemical Journal Langmuir (Langmuir) on.
First author, North Carolina State University Dr. Stuart Wilkins said, they are through the polar gallium nitride semiconductor coated on a self phosphate based coating way to achieve this purpose.
First, the researchers used multilayer self-assembly technology to produce gallium nitride. Then, the phosphoric acid group containing the organic phosphorus molecule is added on the surface of the gallium nitride material. The use of gallium nitride semiconductor improves the luminous efficiency of LED, phosphate based materials to ensure the stability of the Gan, is not easy to react with substances in the environment, reduce the dissolved in solution.
"It is very important to improve the stability of gallium nitride. Wilkins said, because it can create conditions for the future of new technologies in the biomedical field. For example, implantable sensors. "
It is understood that, compared with the common silicon semiconductor LED market, gallium nitride semiconductor can improve light output. If the same power consumption, silicon semiconductor LED luminous flux can reach 1000 lumens, gallium nitride semiconductor LED luminous flux will reach more than 2000 lumens. Therefore, based on GaN semiconductor LED light-emitting efficiency is higher, more energy saving. In addition, compared with the silicon semiconductor LED, gallium nitride semiconductor LED small size, light weight, easier to achieve integration.
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