Silicon carbide (SiC) power device market leader CREE (Nasdaq: CREE) recently announced the launch of a new product series. The product is made of seven 1200V Z-Rec silicon carbide (SiC) Schottky diodes, not only to optimize the performance and price, but also offers a variety of package options and rated current. Through the introduction of a full range of silicon carbide diode product line, CREE will continue to promote the use of silicon carbide power devices to mainstream power applications.
CREE co-founder and power and radio frequency (RF) product development department chief technology officer John Palmour said: "in order to develop a new generation of power electronic products, design engineers are exploring unique performance advantages of SiC Schottky diode, including zero switching losses and reverse recovery loss is not affected by temperature and can work in high frequency electromagnetic interference, can support the lower (EMI) signal. Under the premise of not affecting the performance, the new series of diodes can achieve a higher current density than the previous generation of silicon carbide Schottky diodes and stronger electronic avalanche performance. CREE's recent innovations in the device design and process improvement of continuing efforts, so that we can provide higher rated current value in reducing the cost at the same time per ampere. "
CREE Z-Rec has zero diode reverse recovery loss characteristics, compared with the same silicon diode, switching loss can be reduced to 50%. The product has a high level of switching performance in the operating temperature range, which can simplify the circuit design and save the complex radiator system design. With the use of 1200V in SiC Power MOSFET and CREE recently launched, the SiC Schottky diode can achieve full SiC Power electronic circuit operation, the operation of the switching frequency than traditional silicon diode and IGBT can be four times higher. Not only can reduce the size of inverter application circuit, reduce the complexity and cost of the inverter circuit, but also achieve high system efficiency. Compared with the previous generation silicon carbide Schottky diode, the advantage of this series is to have higher surge ratings and electronic avalanche performance, can help improve the overall reliability of the system.
This series of products is very suitable for driving and anti parallel diode diode used as a booster circuit in the solar inverter and three-phase motor, can also be used for power factor correction and UPS device (PFC) diode, can also run in parallel to meet the higher requirements of power.
Rated current has released devices including 2A[C4D02120x], 5A[C4D05120x], 10A[C4D10120x], 20A[C4D20120x] and 40A[C4D40120x]. Depending on the rated current value, the device can be supplied with standard TO-220 and standard TO-247 package. For the supply of the device, please contact CREE.
Model Z-Rec 1200V Schottky diode has been released and is fully equipped with production qualification. For samples and further understanding of CREE SiC power devices for more details, please visit www.cree.com/power.
About CREE (CREE)
CREE was founded in 1987, is the United States listed companies (1993, NASDAQ: CREE), leading to the world famous manufacturer of compound semiconductor materials, epitaxy, chip, packaging and LED lighting solutions and industry as a whole. CREE LED lighting products has the advantage of gallium nitride (GaN) and silicon carbide (SiC) and other aspects of the one and only material technology and advanced white light, with 1, 100 and 2 U.S. patents, 800 international patents, making CREE LED products has always been in the world leading level. CREE lighting class high-power LED, with high light efficiency, color stability, long life and other advantages. CREE to provide customers with high quality, high reliability light-emitting devices, but also to provide customers with complete sets of LED lighting solutions.
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