Zhou Junming: the growth technology of ultra high brightness and high power LED epitaxial material

In January 24th, sponsored by the China semiconductor lighting engineering research and Industry Alliance, sponsored by semiconductor lighting R & D center of Chinese Academy of Sciences "seminar" semiconductor lighting leading key technique training held in China Academy of Sciences Conference Center victory. At the meeting, Zhou Junming, Professor of physics at the Chinese Academy of Sciences, made a report entitled "preparation of ultra high brightness, high power LED epitaxial material growth technology" report.

In the report, Professor Zhou Junming analyzed the influence of polarization effect on luminous efficiency of GaN based LED and InGaN/GaN asymmetric coupled quantum well width in tunneling assisted anomalous carrier transport; and puts forward the method of asymmetric quantum well structures in quantum power significantly improved; and pointed out that currently the Institute has formed a growing high brightness blue LED epitaxial material production technology, and applied for a patent.

Source: China Semiconductor Lighting Network