Luo Yi: epitaxial growth and preparation of high power GaN based LED materials

In January 24th, sponsored by the China semiconductor lighting engineering research and Industry Alliance, sponsored by semiconductor lighting R & D center of Chinese Academy of Sciences "seminar" semiconductor lighting leading key technique training held in China Academy of Sciences Conference Center victory. At the meeting, Professor Luo Yi, Professor of the Department of electronics, Tsinghua University, entitled "efficient high-power GaN based LED epitaxial growth and preparation of materials," the report.

In the report, starting from the principle of Professor Luo Yi III / V semiconductor materials and epitaxial growth, using CFD method to simulate the growth process of MOCVD, analyzes the growth and problems of GaN doped materials, the growth evaluation and optimization of multiple quantum wells on GaN, that the physical properties of the materials is to accurately understand the original the key to obtain high quality GaN materials.

Source: China Semiconductor Lighting Network