Application of high brightness LED production line in China

The chip technology to reduce the gap with the world advanced level

Newspaper Beijing August 30th news (reporter Ren Xiaopeng) August 28th, Langfang Tsinghua Science Park Electronic Co. Ltd (hereinafter referred to as "core photoelectric") for mass production of high brightness GaN based LED epitaxial wafer, chip, package and lighting production line put into operation, the semiconductor light source on the road of industrialization. According to the measured results of domestic authoritative testing organizations, the core equipment of the self-developed core photoelectric metal chemical vapor deposition equipment (MOCVD) white LED chip production average luminous efficiency has reached 59.3lm/W, China's LED chip industry technology and the world's advanced level further narrowing the gap. As a new semiconductor light source, light emitting diode (LED) advantages in three aspects of energy saving, environmental protection and long life. According to reports, 10%, fluorescent lamp LED energy consumption is only 50% of incandescent lamp; in addition, LED uses solid package, firm structure, service life can reach 100 thousand hours, is about 100 times 10 times of fluorescent lamp and incandescent lamp; and in the aspect of environmental protection, LED compared with incandescent or fluorescent lamps, without the use of vacuum glass there is no package, gas and mercury pollution. According to statistics, in 2003 Chinese high brightness LED chip market sales of 6 billion 100 million, to 2006 China high brightness LED chip market sales will be as high as 15 billion 400 million, while in 2006 the global high brightness LED chip market sales will be as high as 108 billion 500 million. It is in this context, the major developed countries and regions have developed a corresponding national semiconductor lighting program, such as the United States, the next generation of lighting source program, etc.. China has also set up a national semiconductor lighting project coordination leading group in June 2003, officially launched the national semiconductor lighting project, and LED as the "11th Five-Year" science and technology development planning key industries. Reported the high brightness LED industrialization project is led by the Hebei Institute, in cooperation with foreign advanced LED research institutions, the introduction of international advanced technology and innovation, in order to build ultra high brightness GaN based blue, green and white LED wafer, chip production line, and set up R & D center LED. Core optoelectronic technology director Dr. Yi Hanping said that the completion of the production line can produce large quantities of power white LED luminous efficiency can reach 50 LM / W, chip qualified rate of more than 70%. As one of the most core technology, they independently developed the MOCVD control equipment is very strong, which makes them have a strong competitiveness in the manufacturing cost, substrate quality management and improve research ability etc.. Under the control of the MOCVD, the sapphire substrate can uniformly grow more than ten layers of different materials, the diameter of 2 inches of epitaxial wafer can be divided into more than ten thousand chips for the manufacture of lighting equipment. These high brightness LED light source can be widely used in urban landscape lighting, road and traffic directions, indoor and outdoor decorative lighting and other fields.